|  |
| |
| Artikelnr.:
3523E-7619834 Fabrikantnr.:
FDC6306P EAN/GTIN:
5059042879469 |
| |
|
| | |
| PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET. Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 1.9 A | Maximum Drain Source Voltage: | 20 V | Package Type: | SOT-23 | Series: | PowerTrench | Mounting Type: | Surface Mount | Pin Count: | 6 | Maximum Drain Source Resistance: | 270 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 0.4V | Maximum Power Dissipation: | 960 mW | Transistor Configuration: | Isolated | Maximum Gate Source Voltage: | -8 V, +8 V | Length: | 3mm | Maximum Operating Temperature: | +150 °C |
|
| | |
| | | |
| Andere zoekwoorden: MOSFET, MOSFET-transistor, 7619834, Semiconductors, Discrete Semiconductors, MOSFETs, onsemi, FDC6306P |
| | |
| |