IXYS SEMICONDUCTOR IXFH12N100P MOSFET, N-CH, 1KV, 12A, TO-247

Drain Source On State Resistance 1.05 ohm Product Range Polar HiPerFET No. of Pins 3 Pins Rds(on) Test Voltage 10 V Transistor Mounting Through Hole Channel Type N Channel Operating Temperature Max 150 °C Continuous Drain Current Id 12 A Transistor Case Style TO-247 Drain Source Voltage Vds 1 kV Power Dissipation 436 W Qualification - Gate Source Threshold Voltage Max 6.5 V SVHC No SVHC (12-Jan-2017)