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| Artikelnr.:
5696-3573233 Fabrikantnr.:
BSM600D12P3G001 EAN/GTIN:
geen gegevens |
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| Rds(on) Test Voltage - Drain Source On State Resistance - Product Range - No. of Pins - MOSFET Module Configuration Half Bridge Channel Type Dual N Channel Operating Temperature Max 150 °C Continuous Drain Current Id 600 A Transistor Case Style Module Drain Source Voltage Vds 1.2 kV Power Dissipation 2.45 kW Gate Source Threshold Voltage Max 5.6 V SVHC Lead (23-Jan-2024) |
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| Andere zoekwoorden: (SiC), Carbide, Discretes, FETs, Modules, MOSFETs, Semiconductors, Silicon, ROHM, BSM600D12P3G001, 3573233, 357-3233 |
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