Power-transistor | MERCATEO (Pagina 1.214/1.375)

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Infineon IHW15N120E1XKSA1 Single IGBT, 30 A 1200 V, 3-Pin PG-TO247 (3 zoekresultaten)

The Infineon IHW15N120E1 power full monolithic body diode with low forward voltage designed for soft commutation only and has high ruggedness, temperature stable behaviour with low VCEsat.Very tigh...

Infineon

IHW15N120E1XKSA1

vanaf € 1,544*
per stuk

DIODES INC. DMP6350SQ-7 MOSFET, P-CH, 60V, 1.5A, SOT-23 (3 zoekresultaten)

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.257 ohm Product Range - No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 1.5 A Op...

Diodes

DMP6350SQ-7

vanaf € 0,129*
per stuk

Infineon FP50R12N2T7B11BPSA1 3 Phase IGBT, 50 A 1200 V, 23-Pin Module, Chassis Mount (2 zoekresultaten)

Maximum Continuous Collector Current = 50 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 7 Package Type = Module Mounting Type = Chassis Mo...

Infineon

FP50R12N2T7B11BPSA1

vanaf € 73,73*
per stuk

DIODES INC. DMTH6005LK3-13 MOSFET, N-CH, 60V, 90A, TO-252 (1 zoekresultaat)

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0045 ohm Product Range - No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 90 A Op...

Diodes

DMTH6005LK3-13

vanaf € 0,548*
per stuk

Infineon FP50R12N2T7BPSA1 3 Phase IGBT, 50 A 1200 V, 23-Pin Module, Chassis Mount (1 zoekresultaat)

Maximum Continuous Collector Current = 50 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 20 mW Package Type = Module Mounting Type = Ch...

Infineon

FP50R12N2T7BPSA1

vanaf € 69,941*
per stuk

DIODES INC. DMTH4008LFDFWQ-13 MOSFET, N-CH, 40V, 11.6A, U-DFN2020 (1 zoekresultaat)

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0091 ohm Product Range - No. of Pins 6 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 11.6 A ...

Diodes

DMTH4008LFDFWQ-13

vanaf € 0,24*
per stuk

Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM (1 zoekresultaat)

The Infineon 62 mm 1200 V, 600 A dual IGBT module with TRENCHSTOP™ IGBT4 and emitter controlled diode. Also available as variation with common emitter:FF600R12KE4_E.RoHS compliant 4 kV AC 1 min Ins...

Infineon

FF600R12KE4BOSA1

vanaf € 200,858*
per stuk

DIODES INC. DMPH1006UPSQ-13 MOSFET, P-CH, 12V, 80A, POWERDI 5060 (1 zoekresultaat)

Rds(on) Test Voltage 4.5 V Drain Source On State Resistance 0.004 ohm Product Range - No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 80 A Op...

Diodes

DMPH1006UPSQ-13

vanaf € 0,521*
per stuk

Infineon IHW20N135R5XKSA1 IGBT, 40 A 1350 V, 3-Pin PG-TO247-3 (3 zoekresultaten)

The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode offers high breakdown voltage of 1350v.High Efficiency Low Switching Losses Increased Reliability Low El...

Infineon

IHW20N135R5XKSA1

vanaf € 2,044*
per stuk

DIODES INC. DMTH6010SK3-13 MOSFET, N-CH, 60V, 70A, TO-252 (1 zoekresultaat)

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0054 ohm Product Range - No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 70 A Op...

Diodes

DMTH6010SK3-13

vanaf € 0,521*
per stuk

Infineon FP75R12N2T7B11BPSA1 3 Phase IGBT, 75 A 1200 V, 31-Pin Module, Chassis Mount (1 zoekresultaat)

Maximum Continuous Collector Current = 75 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 7 Package Type = Module Mounting Type = Chassis Mo...

Infineon

FP75R12N2T7B11BPSA1

vanaf € 978,49*
per 10 stuks

DIODES INC. DMTH43M8LK3Q-13 MOSFET, N-CH, 40V, 100A, TO-252 (2 zoekresultaten)

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0029 ohm Product Range - No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 100 A O...

Diodes

DMTH43M8LK3Q-13

vanaf € 0,418*
per stuk

Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B (1 zoekresultaat)

The Infineon EasyPIM™ 2B 1200 V, 50 A three phase input rectifier PIM (Power Integrated Modules) IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, NTC and PressFIT contact technology....

Infineon

FP50R12W2T7B11BOMA1

vanaf € 48,10*
per stuk

DIODES INC. DMPH4011SK3Q-13 POWER MOSFET, 40V, 79A, TO-252-3 (2 zoekresultaten)

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0065 ohm Product Range - MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Dr...

Diodes

DMPH4011SK3Q-13

vanaf € 0,585*
per stuk

Infineon FF600R12ME4EB11BOSA1 Common Emitter IGBT Module, 600 A 1200 V, 13-Pin ECONODUAL (1 zoekresultaat)

Maximum Continuous Collector Current = 600 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 20 mW Package Type = ECONODUAL Channel Type = ...

Infineon

FF600R12ME4EB11BOSA1

vanaf € 186,131*
per stuk

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