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| Artikelnr.:
3523E-1811548 Fabrikantnr.:
CY15B104Q-LHXI EAN/GTIN:
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| 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K x 8 High-endurance 100 trillion (1014) read/writes 151-year data retention NoDelay™ writes Advanced high-reliability ferroelectric process Very fast serial peripheral interface (SPI) Up to 40-MHz frequency Direct hardware replacement for serial flash and EEPROM Supports SPI mode 0 (0, 0) and mode 3 (1, 1) Sophisticated write protection scheme Hardware protection using the Write Protect (WP) pin Software protection using Write Disable instruction Software block protection for 1/4, 1/2, or entire array Device ID Manufacturer ID and Product ID Low power consumption 300 A active current at 1 MHz 100 A (typ) standby current 3 A (typ) sleep mode current Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature: –40 °C to +85 °C Packages 8-pin small outline integrated circuit (SOIC) package 8-pin thin dual flat no leads (TDFN) package Meer informatie: | | Memory Size: | 4Mbit | Organisation: | 512 kB x 8 | Interface Type: | Serial-SPI | Data Bus Width: | 8bit | Maximum Random Access Time: | 16ns | Mounting Type: | Surface Mount | Package Type: | DFN | Pin Count: | 8 | Dimensions: | 6 x 5 x 0.7mm | Length: | 5mm | Maximum Operating Supply Voltage: | 3.6 V | Width: | 6mm | Height: | 0.7mm | Maximum Operating Temperature: | +85 °C | Minimum Operating Supply Voltage: | 2 V |
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| Andere zoekwoorden: 1811548, Semiconductors, Memory Chips, FRAM Memory, Infineon, CY15B104QLHXI |
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