|  |
| |
| Artikelnr.:
3523E-1885412 Fabrikantnr.:
FM25CL64B-DG EAN/GTIN:
geen gegevens |
| |
|
| | |
| FRAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified. Nonvolatile Ferroelectric RAM Memory Fast write speed High endurance Low power consumption Meer informatie: | | Memory Size: | 64kbit | Organisation: | 8K x 8 bit | Interface Type: | SPI | Data Bus Width: | 8bit | Maximum Random Access Time: | 20ns | Mounting Type: | Surface Mount | Package Type: | DFN | Pin Count: | 8 | Dimensions: | 4.5 x 4 x 0.75mm | Length: | 4.5mm | Maximum Operating Supply Voltage: | 3.65 V | Width: | 4mm | Height: | 0.75mm | Maximum Operating Temperature: | +85 °C | Automotive Standard: | AEC-Q100 |
|
| | |
| | | |
| Andere zoekwoorden: 1885412, Semiconductors, Memory Chips, FRAM Memory, Infineon, FM25CL64BDG |
| | |
| |