Channel Type = N Maximum Continuous Drain Current = 99 A Maximum Drain Source Voltage = 650 V Package Type = TO-247 Mounting Type = Through Hole Pin Count = 3
NCV8406 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protect...
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requ...
Channel Type = N Maximum Continuous Drain Current = 88 A Maximum Drain Source Voltage = 40 V Package Type = DPAK (TO-252) Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance...
Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFSW6D1N08H - Wettable Flank Option for Enhanced Optical Ins...
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild ‘s proprietary, high cell density, DMOS technology. This hig...
The ON Semiconductor NCDV575 series high current dual channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms internal galvanic isolation from input to each output and functional isolation be...
The ON Semiconductor N-channel power MOSFET flat lead package designed for compact and efficient designs and including high thermal performance. It is used switching power supplies, power switches,...
Channel Type = N Maximum Continuous Drain Current = 316 A Maximum Drain Source Voltage = 40 V Package Type = DFN Mounting Type = Surface Mount Pin Count = 8 Maximum Drain Source Resistance = 1.3 mΩ...