MOSFET-transistor  (25.070 artikelen gevonden)

Supply Voltage = 5V Pin Count = 16 Package Type = SOICns Driver Type = MOSFET

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requ...

Channel Type = N Maximum Continuous Drain Current = 201 A Maximum Drain Source Voltage = 100 V Series = NTB Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 0.00682 Ω C...

Supply Voltage = 18V Pin Count = 40 Package Type = QFNW Driver Type = MOSFET

The NCP51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the lowest possible conduction losses, the driver is capable to deliver the maximum allowable gate voltage to t...

The NSVJ6904DSB6 is a composite type of JFET designed for compact size and high efficiency which can achieve high gain performance. This PPAP capable device is suited for automotive applications.Hi...

Channel Type = N Maximum Continuous Drain Current = 60 A Maximum Drain Source Voltage = 1200 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resista...

NCV8406 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protect...

Output Current = 6 A Supply Voltage = 5V Pin Count = 16 Package Type = SOICns Driver Type = MOSFET Rise Time = 10ns Topology = Isolated Gate Driver Number of Drivers = 1 Mounting Type = Surface Mou...

The ON Semiconductor 150V of power MOSFET used 139 A of drain current used with single N−channel. It produced using an advanced power trench process that incorporates shielded gate technology. It h...

Power Switch ICs

High Current Output (+4.0/-6.0 A) at IGBT Miller Plateau voltages Low VOH and VOL Active Miller Clamp DESAT Protection with Programmable Delay Reduced switching losses and short switching times Ful...

Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free Typical Appli...

The ON Semiconductor 60V of power MOSFET used 342A of drain current with single N−channel. It has lower switching noise/EMI and minimize conduction losses.Low RDS(on) to minimize conduction losses ...

The ON Semiconductor SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resi...