MOSFET-transistor  (25.070 artikelen gevonden)

The ON Semiconductor N-channel MOSFET is produced using advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and...

Output Current = 6.5 A Supply Voltage = 22V Pin Count = 8 Package Type = SOICns Driver Type = MOSFET

Supply Voltage = 5V Pin Count = 16 Package Type = SOICns Driver Type = MOSFET

The ON Semiconductor evaluation board is used as synchronous rectification controller. It has very few external components and illustrates how small and effective such a design can be. This can be ...

Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance.Suitable for automotive applications.Features Low on-resistance High curr...

Output Current = 6.5 A Supply Voltage = 22V Pin Count = 8 Package Type = SOICns Driver Type = MOSFET

Supply Voltage = 22V Pin Count = 8 Package Type = SOICns Driver Type = MOSFET

Output Current = 6.5 A Supply Voltage = 11 → 18V Pin Count = 5 Package Type = SOT23-5ns Driver Type = MOSFET

Power Switch Type = MOSFET Switch On Resistance = 140mΩ Maximum Operating Supply Voltage = 28 V Number of Outputs = 2A Power Rating = 1.17W Package Type = SOIC-8 Pin Count = 8

Output Current = 6.5 A Supply Voltage = 22V Package Type = SOICns Driver Type = MOSFET

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild ‘s proprietary, high cell density, DMOS technology. This hig...

Output Current = 6.5 A Supply Voltage = 22V Pin Count = 8 Fall Time = 13ns Driver Type = MOSFET

Supply Voltage = 5V Pin Count = 16 Package Type = SOICns Driver Type = MOSFET

The ON Semiconductor single N-channel 100V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON re...

The ON Semiconductor NCDV575 series high current dual channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms internal galvanic isolation from input to each output and functional isolation be...