Channel Type = N Maximum Continuous Drain Current = 183 A Maximum Drain Source Voltage = 75 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Channel Mode = Enhancement Number of Elemen...
Channel Type = N Maximum Continuous Drain Current = 24 A Maximum Drain Source Voltage = 200 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Number of Elements per Chip = 1
Channel Type = N Maximum Continuous Drain Current = 24 A Maximum Drain Source Voltage = 200 V Package Type = D²Pak (TO-263AB) Mounting Type = Through Hole
The Infineon HEXFET Power MOSFET has 200V maximum drain source voltage in a DirectFET MZ package rated at 19 amperes optimized with low on resistance. This Digital Audio MOSFET is specifically desi...
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating ...
The Infineon 100V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package.Optimized for Logic Level Drive Very Low RDS(ON) at 4.5V VGS Superior R*Q at 4.5V VGS I improved Gate, Avalanche and...
Channel Type = N Maximum Continuous Drain Current = 260 A Maximum Drain Source Voltage = 75 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Pin Count = 3 Number of Elements per Chip = 1