The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatin...
Channel Type = N Maximum Continuous Drain Current = 260 A Maximum Drain Source Voltage = 75 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Number of Elements per Chip = 1
Channel Type = N Maximum Continuous Drain Current = 217 A Maximum Drain Source Voltage = 40 V Package Type = Direct FET ME Mounting Type = Through Hole
Channel Type = N Maximum Continuous Drain Current = 269 A Maximum Drain Source Voltage = 75 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0.002 Ω C...
Channel Type = N Maximum Continuous Drain Current = 35 A Maximum Drain Source Voltage = 100 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Number of Elements per Chip = 1
Channel Type = N Maximum Continuous Drain Current = 27 A Maximum Drain Source Voltage = 55 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 0.045 Ω Ma...
Channel Type = N Maximum Continuous Drain Current = 250 A Maximum Drain Source Voltage = 40 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 0.0018 O ...
Channel Type = N Maximum Continuous Drain Current = 259 A Maximum Drain Source Voltage = 40 V Package Type = PQFN 5mm x 6mm Mounting Type = Through Hole