Channel Type = N Maximum Continuous Drain Current = 478 A Maximum Drain Source Voltage = 40 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 7 Number of Elements per Chip = 1
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating ...
Channel Type = N Maximum Continuous Drain Current = 43 A Maximum Drain Source Voltage = 60 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Number of Elements per Chip = 1
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating ...
Channel Type = N Maximum Continuous Drain Current = 43A Maximum Drain Source Voltage = 43 A Series = HEXFET Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of Elements ...
Channel Type = N Maximum Continuous Drain Current = 35 A Maximum Drain Source Voltage = 100 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 0.0285 Ω ...
Channel Type = N Maximum Continuous Drain Current = 31 A Maximum Drain Source Voltage = 100 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 31 Ω Chan...
Channel Type = N Maximum Continuous Drain Current = 35 A Maximum Drain Source Voltage = 150 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 7 Number of Elements per Chip = 1
The Infineon 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Op...