The Infineon IRF series single P-Channel power MOSFET. This MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. It is suitable for high current ap...
Channel Type = N Maximum Continuous Drain Current = 71 A Maximum Drain Source Voltage = 60 V Series = HEXFET Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 0.0079 Ω Ma...
N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address ...