The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temper...
The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and ...
Channel Type = N Maximum Continuous Drain Current = 270 A Maximum Drain Source Voltage = 60 V Series = HEXFET Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of Element...
Channel Type = N Maximum Continuous Drain Current = 12 A Maximum Drain Source Voltage = 100 V Series = HEXFET Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of Element...
The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled ...
Channel Type = N Maximum Continuous Drain Current = 16 A Maximum Drain Source Voltage = 100 V Series = HEXFET Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of Element...
The Infineon p channel MOSFET utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device desi...
Channel Type = N Maximum Continuous Drain Current = 35 A Maximum Drain Source Voltage = 150 V Series = HEXFET Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of Element...
Channel Type = N Maximum Continuous Drain Current = 17 A Maximum Drain Source Voltage = 100 V Package Type = TO-251AA Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of...
The Infineon single n channel HEXFET power MOSFET in a DirectFET L8 package allows repetitive avalanche up to Tjmax. It has fast switching speed and it is lead free.It is RoHS compliant and AEC qua...
Channel Type = N Maximum Continuous Drain Current = 210 A Maximum Drain Source Voltage = 40 V Series = HEXFET Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Transistor Materi...
Channel Type = N Maximum Continuous Drain Current = 56 A Maximum Drain Source Voltage = 200 V Series = HEXFET Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of Element...
Channel Type = N Maximum Continuous Drain Current = 270 A Maximum Drain Source Voltage = 60 V Series = HEXFET Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of Element...