Channel Type = N Maximum Continuous Drain Current = 270 A Maximum Drain Source Voltage = 60 V Package Type = TO-220 Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Transistor ...
The Infineon CoolSiC™ 1200 V, 350 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to tradi...
Channel Type = N Maximum Continuous Drain Current = 110 A Maximum Drain Source Voltage = 55 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 0.0065 Ω ...
Channel Type = P Maximum Continuous Drain Current = 13 A Maximum Drain Source Voltage = 150 V Package Type = TO-220 Mounting Type = Through Hole Pin Count = 3
Series = HEXFET Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0.0016 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Transistor Material = Silicon
Maximum Drain Source Voltage = 20 V Series = HEXFET Mounting Type = Surface Mount Maximum Drain Source Resistance = 0.0036 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.45V Transi...
Channel Type = P Maximum Continuous Drain Current = 31 A Maximum Drain Source Voltage = 55 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Number of Elements per Chip = 1
Maximum Continuous Drain Current = 171 A Maximum Drain Source Voltage = 150 V Series = HEXFET Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 0.0059 Ω Channel Mode = En...
Channel Type = N Maximum Continuous Drain Current = 105 A Maximum Drain Source Voltage = 150 V Package Type = D2PAK Mounting Type = Through Hole Pin Count = 7 Channel Mode = Enhancement Transistor ...
Channel Type = N Maximum Continuous Drain Current = 24 A Maximum Drain Source Voltage = 100 V Series = HEXFET Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of Element...