The Infineon -55V Single P-Channel HEXFET Power MOSFET in a D-Pak package.RoHS Compliant Low RDS(on) Industry-leading quality Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated 175°C Operati...
Channel Type = N Maximum Continuous Drain Current = 72 A Maximum Drain Source Voltage = 20 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Number of Elements per Chip = 1
The Infineon automotive qualified single P-channel HEXFET power MOSFET in a D2-pak package. The cellular design of power MOSFETs utilizes the latest processing techniques to achieve low on-resistan...
Channel Type = N Maximum Continuous Drain Current = 80 A Maximum Drain Source Voltage = 75 V Package Type = D-Pak (TO-252AA) Mounting Type = Through Hole
Channel Type = N Maximum Continuous Drain Current = 93 A Maximum Drain Source Voltage = 20 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 0.0078 Ω M...
The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and ...
The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with...
Channel Type = N Maximum Continuous Drain Current = 97 A Maximum Drain Source Voltage = 100 V Series = HEXFET Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Number of Element...